Optically Induced Phase Change for Magnetoresistance Modulation

Abstract

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow‐power and ultrahigh‐speed data storage and processing, which have become an emerging field of spintronics. However, a widely applicable and efficient method has rarely been demonstrated. Here, the strongly correlated electron material vanadium dioxide (VO₂) is used to realize the optically induced phase change for control of the magnetism in NiFe. The NiFe/VO₂ bilayer heterostructure features appreciable modulations of electrical conductivity (32%), coercivity (37.5%), and magnetic anisotropy (25%). Further analyses indicate that interfacial strain coupling plays a crucial role in the magnetic modulation. Utilizing this heterostructure, which can respond to both optical and magnetic stimuli, a phase change controlled anisotropic magnetoresistance (AMR) device is fabricated, and reconfigurable Boolean logics are implemented. As a demonstration of phase change spintronics, this work may pave the way for next‐generation opto‐electronics in the post‐Moore era.