The meandering of steps and the terrace width distribution on clean Si(111): An in-situ experiment using reflection electron microscopy
- 15 February 1992
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 262 (3), 371-381
- https://doi.org/10.1016/0039-6028(92)90133-q
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Observation of surface reconstruction on silicon above 800 °C using the STMNature, 1991
- Distribution of terrace widths on a vicinal surface within the one-dimensional free-fermion modelPhysical Review B, 1991
- Terrace-width distributions on vicinal Si(111)Physical Review Letters, 1990
- Direct determination of step and kink energies on vicinal Si(001)Physical Review Letters, 1990
- Topography of the Si(111) surface during silicon molecular-beam epitaxyPhysical Review Letters, 1989
- Temperature dependence of vicinal Si(111) surfacesPhysical Review B, 1988
- Simple model for crystal shapes: Step-step interactions and facet edgesPhysical Review B, 1984
- Thermodynamics of the roughening transition in stepped surfacesPhysica B: Condensed Matter, 1984
- Some New Techniques in Reflection High Energy Electron Diffraction (RHEED) Application to Surface Structure StudiesJapanese Journal of Applied Physics, 1977
- Surface Energy of Germanium and SiliconJournal of the Electrochemical Society, 1963