Calculation of the electrical impedance associated with the surface recombination of free carriers at an illuminated semiconductor/electrolyte interface
- 14 April 1986
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 19 (4), 643-656
- https://doi.org/10.1088/0022-3727/19/4/017
Abstract
The impedance associated with recombination of free electrons and photoholes in surface states has been calculated. Two types of surface states have been considered: the so-called 'ordinary' surface states that are already present in the dark, and the surface states associated with intermediates of the photo-anodic decomposition. In both cases the result for the parallel equivalent surface state capacitance was characterised by a peak as a function of the electrode potential.Keywords
This publication has 8 references indexed in Scilit:
- Studies on the n‐GaAs Photoanode in Aqueous Electrolytes. 2. Differential Capacitance BehaviourBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Studies on the n-GaAs Photoanode in Aqueous Electrolytes. 1. Behaviour of the Photocurrent in the Presence of a Stabilizing AgentBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Band‐Edge Shift and Surface Charges at Illuminated n ‐ GaAs / Aqueous Electrolyte Junctions: Surface‐State Analysis and Simulation of Their Occupation RateJournal of the Electrochemical Society, 1985
- Influence of illumination on the admittance of GaAs and GaP electrodesElectrochimica Acta, 1983
- Surface states at the TiO2/H2O interface under UV illuminationChemical Physics Letters, 1983
- Role of decomposition-induced and other surface states in the photoelectrochemical kinetics of n-GaP/Fe2+Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1983
- Relationship between stabilization and photocurrent at n-type semiconductor electrodes on the basis of a model including surface recombination through decomposition intermediatesJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1983
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967