Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6B), L1139
- https://doi.org/10.1143/jjap.30.l1139
Abstract
Hydrogen peroxide (H2O2) was used as the oxidant in a sequential surface-chemical-reaction-limited growth system to obtain high-quality thin films of Al2O3. It is observed that trimethylaluminum (TMA) reacts with H2O2 readily at temperatures as low as room temperature, resulting in the identical growth of Al2O3 wherever the reactants reach. The films are highly insulating and ideally uniform.Keywords
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