One dimensional transport in silicon nanowire junction-less field effect transistors
Open Access
- 7 June 2017
- journal article
- research article
- Published by Springer Science and Business Media LLC in Scientific Reports
- Vol. 7 (1), 1-8
- https://doi.org/10.1038/s41598-017-03138-5
Abstract
Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.Keywords
This publication has 45 references indexed in Scilit:
- Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etchingJournal of Vacuum Science & Technology B, 2012
- Spin–orbit qubit in a semiconductor nanowireNature, 2010
- Nanowire transistors without junctionsNature Nanotechnology, 2010
- From Luttinger liquid to Altshuler-Aronov anomaly in multichannel quantum wiresPhysical Review B, 2007
- Spin-Charge Separation and Localization in One DimensionScience, 2005
- Bulk and Boundary Zero-Bias Anomaly in Multiwall Carbon NanotubesPhysical Review Letters, 2001
- Cotunneling of holes in silicon-based structuresPhysical Review B, 1994
- Transport in a one-channel Luttinger liquidPhysical Review Letters, 1992
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Universality aspects of the metal-nonmetal transition in condensed mediaPhysical Review B, 1978