Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedback
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (3), 142-144
- https://doi.org/10.1063/1.88385
Abstract
Separate‐confinement heterostructure injection lasers with periodic corrugations in the optical cavity were prepared by a hybrid liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) growth process. The N‐Al0.3Ga0.7As, N‐Al0.12Ga0.88As, p‐GaAs active layer, and P‐Al0.12Ga0.88As layers were grown by LPE, a 0.3748‐μm periodic corrugation was ion milled into the P‐Al0.12Ga0.88As layer, and then the P‐Al0.3Ga0.7As and p‐GaAs top layers were grown over the corrugation by MBE. The temperature dependence of the lasing wavelength between 12.6 and 24.8 °C demonstrated the behavior expected for a distributed‐feedback laser. The threshold current density was 2.2 kA/cm2 at room temperature.Keywords
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