Rapid thermal processed thin films of reactively sputtered Ta2O5
- 1 March 1995
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 258 (1-2), 230-235
- https://doi.org/10.1016/0040-6090(94)06322-2
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integrationJournal of Applied Physics, 1993
- Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysiliconIEEE Electron Device Letters, 1993
- Reliability characteristics of metal-oxide-semiconductor capacitors with chemical vapor deposited Ta2O5 gate dielectricsApplied Physics Letters, 1993
- Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta2O5 filmsApplied Physics Letters, 1992
- Effects of annealing conditions on the properties of tantalum oxide films on silicon substratesJournal of Electronic Materials, 1992
- Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiationJournal of Non-Crystalline Solids, 1992
- Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen AnnealingJournal of the Electrochemical Society, 1992
- Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate InsulatorsJapanese Journal of Applied Physics, 1990
- Tantalum oxide films for monolithic capacitor applicationsThin Solid Films, 1989
- Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic MemoriesJapanese Journal of Applied Physics, 1986