Hot-Carrier Reliability of Fully Depleted Accumulation Mode Soi Mosfets
- 24 August 2005
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 134-135
- https://doi.org/10.1109/soi.1992.664829
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Degradation in thin-film SOI MOSFET's caused by single-transistor latchIEEE Electron Device Letters, 1990
- Analysis of hot-carrier-induced degradation mode on pMOSFET'sIEEE Transactions on Electron Devices, 1990