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Normally‐on/off AlN/GaN high electron mobility transistors
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Normally‐on/off AlN/GaN high electron mobility transistors
Normally‐on/off AlN/GaN high electron mobility transistors
CC
C. Y. Chang
C. Y. Chang
CL
C. F. Lo
C. F. Lo
F. Ren
F. Ren
S. J. Pearton
S. J. Pearton
I. I. Kravchenko
I. I. Kravchenko
A. M. Dabiran
A. M. Dabiran
BC
B. Cui
B. Cui
P. P. Chow
P. P. Chow
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22 June 2010
journal article
review article
Published by
Wiley
in
physica status solidi (c)
Vol. 7
(10)
,
2415-2418
https://doi.org/10.1002/pssc.200983901
Abstract
No abstract available
Keywords
ALN/GAN
ON/OFF HEMTS
MBE
TRANSCONDUCTANCE
GATE CHARACTERISTICS
Cited by 6 articles