Quantitative "local-interference" model for1fnoise in metal films

Abstract

Electron scattering calculations by Martin are used to predict the magnitude of resistivity fluctuations in metal films arising from the fluctuating interference of electrons in the local environment of a moving defect. A "local-interference" model based on these calculations accounts for the $\frac{1}{f}$-noise magnitude observed in irradiated Cu films and in room-temperature metal films. For relatively ordered metal films at room temperature this model predicts larger noise magnitudes than an alternative model based on universal conductance fluctuations, while the latter model predicts larger noise in metals that are sufficiently disordered and/or at lower temperatures.