Fabrication of Y-Splitters and Mach–Zehnder Structures on (Yb,Nb):RbTiOPO $_{\bf 4}$/RbTiOPO$_{\bf 4}$ Epitaxial Layers by Reactive Ion Etching
- 9 December 2014
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 33 (9), 1863-1871
- https://doi.org/10.1109/jlt.2014.2379091
Abstract
Reactive ion etching of RbTiOPO 4 (0 0 1) substrates and (Yb,Nb):RbTiOPO 4 /RbTiOPO 4 (0 0 1) epitaxial layers has been performed using fluorine chemistry. A maximum etch rate of 8.7 nm/min was obtained, and the deepest etch achieved was 3.5 μm. The (Yb,Nb)-doped epitaxial layers showed a slower etching rate when compared with undoped material. Liquid phase epitaxial growth of cladding layers has also been performed, resulting in a high-quality interface growth without appreciable defects. 9-mm-long Mach-Zehnder interferometer and 9-mm-long Y-splitter structures were designed and patterned in RbTiOPO 4 substrates and (Yb,Nb):RbTiOPO 4 /RbTiOPO 4 (0 0 1) epitaxial layers. The structures fabricated in RbTiOPO 4 substrates were filled with laser active (Yb,Nb):RbTiOPO 4 higher refractive index core material, and finally an RbTiOPO 4 cladding was grown on the samples. The refractive index difference between the (Yb,Nb):RbTiOPO 4 layer and the RbTiOPO 4 substrate at 1.5 μm has been measured and optical waveguiding at this wavelength has been demonstrated.Funding Information
- Spanish Government (MAT2013-47395-C4-4-R)
- Catalan Authority (2014SGR1358)
- Catalan Government
- FI-DGR fellowship (2012FI-B 00192)
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