Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory
- 9 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (5), 309-311
- https://doi.org/10.1109/led.2003.812547
Abstract
High-quality silicon-nitride (Si/sub 3/N/sub 4/) formed by rapid thermal nitridation is investigated as the tunnel dielectric in a SONOS-type memory device for the first time. Compared to a conventional thermal SiO/sub 2/ tunnel dielectric, thermal Si/sub 3/N/sub 4/ provides 100/spl times/ better retention after 1e5 P/E cycles and better endurance characteristics with low programming voltages. Hence, the SONNS structure is promising for nonvolatile memory applications.Keywords
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