Temperature and thickness dependence of electrical and thermal transport coefficients of Bi1–xSbx films in an anisotropic, non‐degenerate two‐band model
- 1 March 1986
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 134 (1), 351-362
- https://doi.org/10.1002/pssb.2221340145
Abstract
The thickness and temperature dependences of electrical and thermal transport coefficients (e.g. electrical conductivity, thermoelectric power, thermal conductivity) of Bi1–xSbx films are described by a non‐degenerated two‐band model, considering the anisotropic elliptical band structure (many‐valley model) of bulk Bi1–xSbx. The transport coefficients are measured in the temperature range 80 to 400 K on films with thicknesses 20 to 400 nm and the results are interpreted and discussed using the deduced relations. Die Schichtdicken‐ und Temperatura bhängigkeit elektrischer und thermischer Transportkoeffi‐zienten (z. B. der elektrischen Leitfähigkeit, der Thermokraft, der Wärmeleitfähigkeit) von Bi1–xSbx‐Schichten wird im Rahmen eines nicht entarteten Zweiband‐Modells unter Berücksichtigung der anisotropen elliptischen Bandstruktur (many valley model) von massivem Bi1–xSbx beschrieben. Die Transportkoeff izienten werden im Temperaturbereich 80 bis 400 K an Schichten von 20 bis 400 nm Dicke gemessen, und die Ergebnisse werden mit den abgeleiteten Beziehungen interpretiert und diskutiert.Keywords
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