Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
- 1 February 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (4), 3932-3940
- https://doi.org/10.1364/oe.20.003932
Abstract
Excitation power and temperature dependences of the photoluminescence (PL) spectra are studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature. The anomalous temperature dependences of the peak energy and linewidth are well explained by the localized carrier hopping and thermalization process, and by the exponentially increased density of states with energy in the band tail. Moreover, it is also found that internal quantum efficiency is related to the mechanism conversion from nonradiative to radiative mechanism, and up to the carriers escaping from localized states.Keywords
This publication has 29 references indexed in Scilit:
- Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodesJournal of Applied Physics, 2011
- Investigation of fast and slow decays in InGaN/GaN quantum wellsApplied Physics Letters, 2011
- Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diodeApplied Physics Letters, 2007
- Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor depositionApplied Physics Letters, 2004
- Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relationJournal of Applied Physics, 2000
- “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Exciton localization in InGaN quantum well devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient TemperaturesJapanese Journal of Applied Physics, 1998
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985