Effective masses of holes at GaAs-AlGaAs heterojunctions
- 15 January 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (2), 888-892
- https://doi.org/10.1103/physrevb.31.888
Abstract
The spin-split hole subband structure for a GaAs p-channel inversion layer is calculated. From it, density-of-states masses and cyclotron masses as a function of magnetic field are extracted. Results indicate significant discrepancies between calculated and measured masses. Many-body effects on the effective mass may be important.Keywords
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