Atomic layer deposition of lithium containing thin films
- 13 October 2009
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 19 (46), 8767-8771
- https://doi.org/10.1039/b913466b
Abstract
Five different lithium containing compounds, all representing different chemical systems, were studied in order to deposit lithium containing films by atomic layer deposition ALD. The studied compounds were a lithium β-diketonate Li(thd) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), a lithium alkoxide LiOtBu (OtBu = tert-butoxide), a lithium cyclopentadienyl LiCp (Cp = cyclopentadienyl), a lithium alkyl n-butyllithium, and a lithium amide lithium dicyclohexylamide. Films containing lithium carbonate (Li2CO3) were obtained from alternate pulsing of Li(thd) and ozone in a temperature range of 185–300 °C. The film composition was analyzed by time-of-flight elastic recoil detection analysis (TOF-ERDA). The films grown at 225 °C were polycrystalline lithium carbonate as analyzed by X-ray diffraction (XRD). A 120 nm thick lithium carbonate film grown at 225 °C had a surface roughness of 19 nm as analyzed by AFM. Lithium lanthanate thin films were grown by combining the Li(thd) process with a ALD process for lanthanum oxide from La(thd)3 and ozone. The film composition was varied by controlling the number of lithium carbonate and lanthanum oxide sub-cycles. Lithium containing films were also obtained from LiCp and water and from LiOtBu and water.Keywords
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