Correlation-Driven Charge Order at the Interface between a Mott and a Band Insulator

Abstract

To study digital Mott insulator ${\mathrm{LaTiO}}_3$ and band insulator ${\mathrm{SrTiO}}_3$ interfaces, we apply correlated band theory within the local density approximation including a Hubbard U to ($n$, $m$) multilayers, $1\le n$, $m\le 9$ using unit cells with larger lateral periodicity. If the on-site repulsion on Ti is big enough to model the Mott insulating behavior of undistorted ${\mathrm{LaTiO}}_3$, the charge imbalance at the interface is found in all cases to be accommodated by disproportionation (${\mathrm{Ti}}^{4+}+{\mathrm{Ti}}^{3+}$), charge ordering, and ${\mathrm{Ti}}^{3+}$ $d_{xy}$-orbital ordering, with antiferromagnetic exchange coupling between the spins in the interface layer. Lattice relaxations lead to conducting behavior by shifting (slightly but importantly) the lower Hubbard band, but the charge and orbital order is robust against relaxation.