AlGaSb avalanche photodiode exhibiting a very low excess noise factor
- 12 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (24), 2422-2423
- https://doi.org/10.1063/1.101095
Abstract
An Al0.053Ga0.947Sb avalanche photodiode (APD) has been fabricated and tested. First, measurement of an excess noise factor as well as an ionization rate ratio has been demonstrated. A low excess noise factor of 3.8, which is 1.2 dB lower than the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole-to-electron ionization rate ratio (keff) has been determined as high as 5, being in good agreement with the hole-to-electron ionization rate ratio (β/α) given by the multiplication data. This keff value is the highest ever reported for long-wavelength III-V APDs.Keywords
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