Structural modifications in amorphous Ge produced by ion implantation
- 1 May 2001
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 178 (1-4), 192-195
- https://doi.org/10.1016/s0168-583x(00)00489-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Ion-dose-dependent microstructure in amorphous GePhysical Review B, 2000
- Different recrystallization patterns of Si+ implanted GaAsJournal of Applied Physics, 1999
- Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channelingPhysical Review B, 1997
- Raman study of the network disorder in sputtered and glow discharge a-Si:H filmsJournal of Applied Physics, 1995
- Contribution of defects to electronic, structural, and thermodynamic properties of amorphous siliconJournal of Applied Physics, 1994
- Structural relaxation and defect annihilation in pure amorphous siliconPhysical Review B, 1991
- Comparative study of implantation-induced damage in GaAs and Ge: Temperature and flux dependenceApplied Physics Letters, 1991
- Variable strain energy in amorphous siliconJournal of Materials Research, 1988
- Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scatteringSolid State Communications, 1985