Dissociation of H-related defect complexes in Mg-doped GaN
- 17 March 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (12), 125210
- https://doi.org/10.1103/physrevb.69.125210
Abstract
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately Mg-doped (p-type) GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped (n-type) GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg and that the donor (20–30 meV) is hydrogen-related, possibly a complex. This complex is dissociated either by electron irradiation or thermal annealing in or atmosphere. We found that upon electron irradiation, a deeper emission line (centered at 3.14 eV) emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor (100–200 meV) with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at and were identified as being responsible for the blue band (2.8–3.0 eV) in heavily Mg-doped GaN. The donor level at was strongly affected by electron irradiation and attributed to a H-related defect.
Keywords
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