Coherent Population Trapping of Electron Spins in a High-Purity-Type GaAs Semiconductor
- 27 October 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 95 (18), 187405
- https://doi.org/10.1103/physrevlett.95.187405
Abstract
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.Keywords
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This publication has 30 references indexed in Scilit:
- Stationary pulses of light in an atomic mediumNature, 2003
- Phase coherence and control of stored photonic informationPhysical Review A, 2002
- Observation of Ultraslow and Stored Light Pulses in a SolidPhysical Review Letters, 2001
- Long-distance quantum communication with atomic ensembles and linear opticsNature, 2001
- Storage of Light in Atomic VaporPhysical Review Letters, 2001
- Observation of coherent optical information storage in an atomic medium using halted light pulsesNature, 2001
- Dark-State Polaritons in Electromagnetically Induced TransparencyPhysical Review Letters, 2000
- Light speed reduction to 17 metres per second in an ultracold atomic gasNature, 1999
- Photon Switching by Quantum InterferencePhysical Review Letters, 1998
- Electromagnetically Induced TransparencyPhysics Today, 1997