Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

Abstract

Possible geometrical structures for dislocation cores in elementary and compound semiconductors are shown and discussed in the light of a review of recent work in HREM and core energy calculations. It appears that partial dislocations have complex cores, with an average glide character, but containing a number of shuffle sites, the nature of which depends on the character of the dislocations. These core structures are shown to account qualitatively for a number of experimental results on dislocations mobility and electrical properties