Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
- 1 January 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (1R), 297-298
- https://doi.org/10.1143/jjap.40.297
Abstract
A ZnO thin film was deposited on a Si wafer having an oxidized SiO2 layer using a chemical solution deposition process and was applied to a bottom-gate type thin film transistor (TFT). The films prepared by combined heating at 600° and 900°C exhibited typical enhancement-type TFT characteristics with electrons as carriers. The low heating temperature around 600°C degraded the insulating properties of the SiO2 layer but high temperature annealing recovered that.Keywords
This publication has 7 references indexed in Scilit:
- Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductorsApplied Physics Letters, 1999
- First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting OxidesJapanese Journal of Applied Physics, 1999
- Electrical properties of p–n contact with oxide semiconductor thin films fabricated by liquid phase methodMaterials Science and Engineering B, 1998
- Preparation of field effect transistor using nano-crystalline GaNJournal of Non-Crystalline Solids, 1998
- Oxide Thin Film Diode Fabricated by Liquid-Phase MethodJapanese Journal of Applied Physics, 1996
- Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxideJournal of Materials Science, 1994
- Transparent conducting p-type NiO thin films prepared by magnetron sputteringThin Solid Films, 1993