Guest Editorial: The dawn of gallium oxide microelectronics
- 5 February 2018
- journal article
- editorial
- Published by AIP Publishing in Applied Physics Letters
- Vol. 112 (6), 060401
- https://doi.org/10.1063/1.5017845
Abstract
No abstract availableKeywords
This publication has 67 references indexed in Scilit:
- Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopyJapanese Journal of Applied Physics, 2015
- First-principles study of the structural, electronic, and optical properties ofin its monoclinic and hexagonal phasesPhysical Review B, 2006
- Fabrication of hexagonal GaN on the surface of β-Ga2O3 single crystal by nitridation with NH3Thin Solid Films, 2005
- Large-size β-Ga2O3 single crystals and wafersJournal of Crystal Growth, 2004
- An assessment of wide bandgap semiconductors for power devicesIEEE Transactions on Power Electronics, 2003
- Deep-ultraviolet transparent conductive β-Ga2O3 thin filmsApplied Physics Letters, 2000
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Semiconductors for high-voltage, vertical channel field-effect transistorsJournal of Applied Physics, 1982
- Optical Absorption and Photoconductivity in the Band Edge ofPhysical Review B, 1965
- Polymorphism of Ga2O3 and the System Ga2O3—H2OJournal of the American Chemical Society, 1952