Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
- 1 May 2007
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 303 (2), 449-455
- https://doi.org/10.1016/j.jcrysgro.2006.12.032
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Growth mechanisms of highly mismatched AlSb on a Si substrateApplied Physics Letters, 2005
- GaInNAs(Sb) long wavelength communications lasersIEE Proceedings - Optoelectronics, 2004
- Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVDIEEE Electron Device Letters, 2002
- Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/SiApplied Physics Letters, 1998
- Incoherent interface of InAs grown directly on GaP(001)Applied Physics Letters, 1996
- Novel plastic strain-relaxation mode in highly mismatched III-V layers induced by two-dimensional epitaxial growthApplied Physics Letters, 1995
- CaP/Si Heteroepitaxial Layers with Reduced Defect DensityMRS Proceedings, 1988
- Defect Reduction in Mocvd Grown Si/GaAsMRS Proceedings, 1988
- Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxyApplied Physics Letters, 1987
- Molecular-beam epitaxy of GaSb/AlSb optical device layers on Si(100)Journal of Applied Physics, 1986