Influence of Substrate Temperature on Physical Structure of AlN Thin Films Prepared on Polycrystalline MoSi2 by rf Magnetron Sputtering
- 1 December 1995
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 78 (12), 3304-3308
- https://doi.org/10.1111/j.1151-2916.1995.tb07969.x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Self-Detection of Fracture in PZT and MoSi2-Mo2B5 Layered Composite CeramicsJournal of the Ceramic Society of Japan, 1994
- Preventing Fatal Fractures in Carbon‐Fiber–Glass‐Fiber‐Reinforced Plastic Composites by Monitoring Change in Electrical ResistanceJournal of the American Ceramic Society, 1993
- Intelligent ceramicsFerroelectrics, 1990
- On the properties of AlN thin films grown by low temperature reactive r.f. sputteringThin Solid Films, 1986
- Sputtering and chemical vapour deposition of piezoelectric ZnO, AlN and K3Li2Nb5O15 films for optical waveguides and surface acoustic wave devicesThin Solid Films, 1982
- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980
- Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatingsJournal of Vacuum Science and Technology, 1974
- rf-sputtered aluminum nitride films on sapphireApplied Physics Letters, 1974
- Radiofrequency reactive sputtering for deposition of aluminium nitride thin filmsThin Solid Films, 1971
- Dielectric Properties of Reactively Sputtered Films of Aluminum NitrideJournal of Vacuum Science and Technology, 1969