InGaAs -on-Si single photon avalanche photodetectors
- 6 September 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (10), 1668-1670
- https://doi.org/10.1063/1.1788882
Abstract
In this letter, an -on- single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high absorption coefficient of and low noise avalanche multiplication of .
Keywords
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