The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
Open Access
- 5 March 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (10), 102110
- https://doi.org/10.1063/1.3691920
Abstract
We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials.Keywords
This publication has 15 references indexed in Scilit:
- Photo‐Curable Polymer Blend Dielectrics for Advancing Organic Field‐Effect Transistor ApplicationsAdvanced Materials, 2010
- Effect of pentacene–dielectric affinity on pentacene thin film growth morphology in organic field-effect transistorsJournal of Materials Chemistry, 2010
- Present status of amorphous In–Ga–Zn–O thin-film transistorsScience and Technology of Advanced Materials, 2010
- Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heatingNanotechnology, 2009
- Hysteresis-free organic field-effect transistors and inverters using photocrosslinkable poly(vinyl cinnamate) as a gate dielectricApplied Physics Letters, 2008
- Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistorApplied Physics Letters, 2007
- Recent progress in transparent oxide semiconductors: Materials and device applicationThin Solid Films, 2007
- Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulatorJournal of Applied Physics, 2004
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Control of carrier density by self-assembled monolayers in organic field-effect transistorsNature Materials, 2004