Gate-Activated Photoresponse in a Graphene p–n Junction
- 12 September 2011
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (10), 4134-4137
- https://doi.org/10.1021/nl2019068
Abstract
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensionsKeywords
Other Versions
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