Germanium orthogonal strip detectors with amorphous-semiconductor contacts
- 1 August 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (4), 1360-1363
- https://doi.org/10.1109/23.872978
Abstract
Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphous- semiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphous- semiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li diffused contacts. A 5 × 5 orthogonal strip detector has been produced using this technique. Experimental results from this detector are presented.Keywords
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