Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage

Abstract
The elemental N emerged uniformly in GDY after heat treatment under NH3 atmosphere to form N-doping GDY. The inter-planar N-GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance and superior cycling stability. In addition, N-doping might be advantageous to minimise the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials.
Funding Information
  • Ministry of Science and Technology of the People's Republic of China (2011CB932302, 2012CB932900)
  • Chinese Academy of Sciences