Chemical bonding and electronic structure in binary VNy and ternary T1−xVxNy nitrides
- 1 February 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (3), 1396-1402
- https://doi.org/10.1063/1.366843
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Electronic structure of stoichiometric and substoichiometric vanadium nitrade from photoelectron spectroscopySolid State Communications, 1989
- Angle-resolved photoemission study of the valence-band structure of(100)Physical Review B, 1987
- Vacancy-induced structures in the angle-resolved photoemission spectra of substoichiometric(100)Physical Review B, 1987
- Band structure and chemical bonding in transition metal carbides and nitridesCritical Reviews in Solid State and Materials Sciences, 1987
- Characterization of nitride coatings by Auger electron spectroscopy and x-ray photoelectron spectroscopyJournal of Vacuum Science & Technology A, 1986
- Dielectric properties of , , , and from 1.5 to 40 eV determined by electron-energy-loss spectroscopyPhysical Review B, 1984
- Vacancy effects in the x-ray photoelectron spectra ofPhysical Review B, 1983
- Recent investigations on the electronic structure of the fourth and fifth group transition metal monocarbides, mononitrides, and monoxidesInternational Journal of Quantum Chemistry, 1983
- Photoemission study of the electronic structure of stoichiometric and substoichiometric TiN and ZrNPhysical Review B, 1982
- Electron-energy-loss- and ultraviolet-photoemission-spectroscopy study of thesystemPhysical Review B, 1981