Exciton diffusion length in the organic semiconductor diindenoperylene
- 31 March 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (13), 133306
- https://doi.org/10.1063/1.2896654
Abstract
The photovoltaic behavior of Schottky barrier devices consisting of a single diindenoperylene (DIP) layer sandwiched between an indium tin oxide and Agelectrode has been investigated. Correlating the spectral dependence of the photocurrent and the absorption coefficient, we estimated the excitondiffusion length in DIP to ∼ 100 nm along the c ′ direction. X-ray structural analysis yielded this length to be in agreement with the average crystallite size, thereby, revealing domain boundaries to be the limiting effect on the exciton transport. The corresponding excitondiffusion constant of 5 × 10 − 3 cm 2 ∕ s resembles that of highly ordered single crystals of polyaromatic hydrocarbons.Keywords
This publication has 20 references indexed in Scilit:
- Highly Efficient Organic Devices Based on Electrically Doped Transport LayersChemical Reviews, 2007
- Production Aspects of Organic Photovoltaics and Their Impact on the Commercialization of DevicesMRS Bulletin, 2005
- Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronicsApplied Physics Letters, 2005
- Optical properties and morphology of thin diindenoperylene filmsJournal of Luminescence, 2004
- Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin filmsNature, 2003
- High structural order in thin films of the organic semiconductor diindenoperyleneApplied Physics Letters, 2002
- Recent Developments in Conjugated Polymer Based Plastic Solar CellsMonatshefte für Chemie / Chemical Monthly, 2001
- Photoluminescence quenching at a heterojunctionPhysical Review B, 2000
- Fabrication of highly efficient organic electroluminescent devicesApplied Physics Letters, 1998
- Organic solar cells: A reviewSolar Cells, 1983