A simulation study of high voltage 4H-SiC IGBTs
- 1 July 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (7), 806-815
- https://doi.org/10.1088/0268-1242/13/7/026
Abstract
This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.Keywords
This publication has 1 reference indexed in Scilit:
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994