Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2), 351-355
- https://doi.org/10.1109/t-ed.1987.22929
Abstract
This paper reports the safe operating area (SOA) for 1200-V nonlatchup bipolar-mode MOSFET's. The measured SOA limit, in terms of current density and drain-voltage product, reached 2.5 × 10 5 W/cm 2 for 125°C-case temperature and 10-µs pulse operation conditions. It exceeded even the so-called "avalanche limit" for n-p-n bipolar transistors when the measurement was carried out under 25°C-case temperature conditions. These SOA's enable device protection from an abnormally large drain-current surge.Keywords
This publication has 9 references indexed in Scilit:
- The effect of MOS Channel length on the performance of insulated gate transistorsIEEE Electron Device Letters, 1985
- 600- and 1200-V bipolar-mode MOSFET's with high current capabilityIEEE Electron Device Letters, 1985
- Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASOPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- Improved COMFETs with fast switching speed and high-current capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- 25 amp, 500 volt insulated gate transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- The insulated gate rectifier (IGR): A new power switching devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Some effects of base current on transistor switching and reverse-bias second breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978