Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration

Abstract

Tungsten trioxide (WO₃) is always oxygen-deficient or non-stoichiometric under atmospheric conditions. Positively charged oxygen vacancies prefer to drift as well as electrons when the electric field is strong enough, which will alter the distribution of oxygen vacancies and then endow WO₃ with memristive properties. In Au/WO₃ nanowire/Au sandwich structures with two ohmic contacts, the axial distribution of oxygen vacancies and then the electrical transport properties can be more easily modulated by bias voltage. The threshold electric field for oxygen vacancy drifting in single-crystal hexagonal WO₃ nanowire is about 10⁶ V/m, one order of magnitude less than that in its granular film. At elevated temperatures, the oxygen vacancy drifts and then the memristive effect can be enhanced remarkably. When the two metallic contacts are asymmetric, the WO₃ nanowire devices even demonstrate good rectifying characteristic at elevated temperatures. Based on the drift of oxygen vacancies, nanoelectronic devices such as memristor, rectifier, and two-terminal resistive random access memory can be fabricated on individual WO₃ nanowires.