Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
- 2 March 2010
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 104 (9), 096801
- https://doi.org/10.1103/physrevlett.104.096801
Abstract
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant , respectively. DOI: http://dx.doi.org/10.1103/PhysRevLett.104.096801 © 2010 The American Physical Society
Keywords
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