Magnetoresistance due to Edge Spin Accumulation
- 17 September 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 99 (12), 126601
- https://doi.org/10.1103/physrevlett.99.126601
Abstract
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An applied magnetic field will destroy the edge spin polarization leading to a positive magnetoresistance. This effect provides means to study spin accumulation by electrical measurements. The origin and the general properties of the phenomenological equations describing coupling between charge and spin currents are also discussed.Keywords
Other Versions
This publication has 6 references indexed in Scilit:
- Room-Temperature Reversible Spin Hall EffectPhysical Review Letters, 2007
- Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor SystemPhysical Review Letters, 2005
- Observation of the Spin Hall Effect in SemiconductorsScience, 2004
- Dissipationless Quantum Spin Current at Room TemperatureScience, 2003
- Current-induced spin orientation of electrons in semiconductorsPhysics Letters A, 1971
- Hall Effect in FerromagneticsPhysical Review B, 1954