AlxGa1−xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
- 7 January 2005
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 275 (3-4), 398-403
- https://doi.org/10.1016/j.jcrysgro.2004.12.007
Abstract
No abstract availableKeywords
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