Effect of substrate temperature on pulsed laser ablated Zn0.95Co0.05O diluted magnetic semiconducting thin films

Abstract

Room temperature ferromagnetic ${\mathrm{Zn}}_{0.95}{\mathrm{Co}}_{0.05}\mathrm{O}$ thin film with (002) preferential orientation has been deposited by pulsed laser deposition at different substrate temperatures on $n$ -type (100) silicon substrate. A maximum saturation magnetization of $0.86{\mu }_B∕\mathrm{Co}$ was achieved at room temperature. High-resolution transmission electron microscope and x-ray photoelectron spectroscopy results indicate that this ferromagnetism behavior is not due to Co microclusters in the thin film. Zinc interstitials, oxygen vacancies, and lattice defects induced by low substrate deposition temperature show a significant effect on ferromagnetic behavior. By changing the substrate deposition temperature to control the amount of zinc interstitials, oxygen vacancies, and lattice defects, ferromagnetism can be tuned significantly as well, which is a direct evidence that these defects contributed to the ferromagnetism in ZnO:Co thin films.