Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

Abstract

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of ${\mathrm{In}}_{\text{1−x}}{\mathrm{Ga}}_x\mathrm{N}$ alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in ${\mathrm{In}}_{\text{1−x}}{\mathrm{Ga}}_x\mathrm{N}$ alloys.