Studies of bulk and surface states of cubic II–VI semiconductors using synchrotron radiation
- 1 June 1977
- journal article
- research article
- Published by Springer Science and Business Media LLC in Il Nuovo Cimento B (1971-1996)
- Vol. 39 (2), 704-708
- https://doi.org/10.1007/bf02725813
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- LEED intensity analysis and electron spectroscopy of ZnSe(110)Journal of Vacuum Science and Technology, 1977
- Angle-resolved photoemission studies of surface states on (110) GaAsJournal of Vacuum Science and Technology, 1976
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Measurement of the Angle of Dangling-Bond Photoemission from Cleaved SiliconPhysical Review Letters, 1974
- Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyPhysical Review B, 1974
- Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende SemiconductorsPhysical Review B, 1973