Quantum of optical absorption in two-dimensional semiconductors
Open Access
- 4 June 2013
- journal article
- research article
- Published by Proceedings of the National Academy of Sciences in Proceedings of the National Academy of Sciences of the United States of America
- Vol. 110 (29), 11688-11691
- https://doi.org/10.1073/pnas.1309563110
Abstract
The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III–V quantum wells and graphene.Keywords
This publication has 28 references indexed in Scilit:
- Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility TransistorsNano Letters, 2012
- Insulating Behavior in Ultrathin Bismuth Selenide Field Effect TransistorsNano Letters, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two-Dimensional CrystalsNano Letters, 2010
- Fine Structure Constant Defines Visual Transparency of GrapheneScience, 2008
- Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfacesPhysical Review Letters, 1991
- Absorption spectroscopy on As/As multi-quantum-well heterostructures. II. Subband structurePhysical Review B, 1987
- Direct experimental observation of two-dimensional shrinkage of the exciton wave function in quantum wellsPhysical Review B, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974