Effects of thermal annealing of ZnO layers grown by MBE
- 2 June 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 214-215, 312-315
- https://doi.org/10.1016/s0022-0248(00)00099-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBEJournal of Crystal Growth, 2000
- Dynamics of photoexcited carriers in ZnO epitaxial thin filmsApplied Physics Letters, 1999
- Residual Native Shallow Donor in ZnOPhysical Review Letters, 1999
- Electrical properties of bulk ZnOSolid State Communications, 1998
- II-VI laser diode with low operating voltage and long device lifetimeElectronics Letters, 1998
- MBE growth and properties of ZnO on sapphire and SiC substratesJournal of Electronic Materials, 1996
- Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressureSolid State Communications, 1995
- Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopyJournal of Crystal Growth, 1994
- ESR and Photo-ESR Investigations of Zinc Vacancies and Interstitial Oxygen Ions in Undoped ZnO Ceramicsphysica status solidi (a), 1991
- The Biexciton Levels and Nonlinear Optical Transitions in ZnOPhysica Status Solidi (b), 1983