Temperature distribution of silicon-on-insulator systems during recrystallization processing
- 1 March 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5), 1663-1666
- https://doi.org/10.1063/1.336481
Abstract
The temperature distribution during melting–recrystallization processing of thin silicon films for electronic devices was calculated numerically and is presented in graphical form. Two methods of high-quality recrystallization are analyzed: the antireflective coating method and the stepwise thickness variation of the silicon dioxide. The controlling parameters were determined and their effects on temperature distributions are presented.Keywords
This publication has 3 references indexed in Scilit:
- Heat-source power requirements for high-quality recrystallization of thin silicon films for electronic devicesJournal of Applied Physics, 1986
- Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2Journal of the Electrochemical Society, 1983
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982