Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7), L353-356
- https://doi.org/10.1143/jjap.19.l353
Abstract
Silicon carbide (SiC) blue-light-emitting diodes with an external quantum efficiency of 2×10-5 photons/electron were prepared by the chemical vapor deposition method. Epitaxial growth of 6H-SiC has been carried out at 1800°C on a 6H-SiC substrate using the SiCl4-C3H8-H2 system. Epitaxial layers of the n and p types with appropriate carrier concentrations were obtained by doping N from NH3 and Al from AlCl3, respectively. A pn junction was prepared in one growth run by a double epitaxial process. The peak wavelength of the electroluminescence spectrum was 495 nm.Keywords
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