Thecharge transfer energy and the relation with the band gap of compounds
- 22 September 2004
- journal article
- Published by Elsevier BV in Journal of Luminescence
- Vol. 111 (1-2), 89-104
- https://doi.org/10.1016/j.jlumin.2004.07.003
Abstract
No abstract availableKeywords
This publication has 193 references indexed in Scilit:
- The luminescence of Eu3+ ion in Ca2Al2SiO7Optical Materials, 2004
- Growth and optical properties of Yb doped new scintillator crystalsOptical Materials, 2003
- Luminescence and scintillation properties of YAG:PrIEEE Transactions on Nuclear Science, 2002
- Luminescent Properties of Eu[sup 3+] in Defect Apatite, Sr[sub 3]La[sub 6](SiO[sub 4])[sub 6]Journal of the Electrochemical Society, 2002
- On the reasons for low luminescence efficiency in combustion-made Lu2O3:TbOptical Materials, 2001
- VUV excitation properties of LnAl3B4O12:Re (Ln=Y, Gd; Re=Eu, Tb)Journal of Physics and Chemistry of Solids, 2000
- Fluorescence Spectra of Eu3+and Tb3+Doped Na6Ln (BO3)3(Ln = La, Gd, Y) PhosphorsSpectroscopy Letters, 1996
- Luminescence and energy migration in the oxyapatite Ca2Gd8(SiO4)6O2 doped with several rare earth and mercury-like ionsJournal of Alloys and Compounds, 1994
- On the luminescence of hafnium compoundsMaterials Research Bulletin, 1994
- Influence of Impurities on the Luminescence Quantum Efficiency of ( La , Ce , Tb ) PO 4Journal of the Electrochemical Society, 1993