Abstract
A theory describing the double-carrier injection and recombination in thin insulating crystals is developed and applied to the case of current flow in anthracene. The diffusion-free analysis indicates that the scaling J∝V2/d3 holds, even when recombination effects are present for any crystal thickness. The same scaling is shown to be valid when diffusion effects are present, if the injecting contacts are not limiting. The individual effects of recombination, diffusion, contacts, and crystal thickness are studied and discussed.