Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
- 24 September 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (13), 2016-2018
- https://doi.org/10.1063/1.1402160
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxial aluminum carbide formation in 6H–SiC by high-dose Al+ implantationApplied Physics Letters, 1999
- Thermodynamic calculation of the ternary system Al-Si-CCalphad, 1996
- Site-competition epitaxy for superior silicon carbide electronicsApplied Physics Letters, 1994
- Mechanism and kinetics of the chemical interaction between liquid aluminium and silicon-carbide single crystalsJournal of Materials Science, 1993
- Stable and metastable phase equilibria in the chemical interaction between aluminium and silicon carbideJournal of Materials Science, 1990
- Phase equilibria in the Al-Si-C systemMetallurgical Transactions A, 1987