Improved efficiency Si-photonic attenuator.
- 7 October 2008
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 16 (21), 16754-16765
- https://doi.org/10.1364/oe.16.016754
Abstract
A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator.This publication has 11 references indexed in Scilit:
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